High Power Bipolar Transistors
Tip Series
Features:
•
Collector-Emitter sustaining voltage-
= 60 V (Minimum) - TIP29A, TIP30A
V
CEO (sus)
= 100 V (Minimum) - TIP29C, TIP30C
Collector-Emitter saturation voltage-
= 0.7 V (Maximum) at I
C
= 1 A
V
CE (sat)
Current gain-bandwidth product f
T
= 3 MHz (Minimum) at I
C
= 200 mA
•
•
Dimensions
A
B
C
D
E
F
G
H
I
J
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
K
L
M
O
Minimum
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.2
0.33
2.48
3.7
Maximum
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.9
NPN
PNP
TIP29A TIP30A
TIP29C TIP30C
1A
Complementary Silicon
Power Transistors
40 - 100 V
30 W
TO-220
Dimensions : Millimetres
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
- Peak
Base Current
Total Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
J,
T
STG
TIP29A
TIP30A
60
5
1
3
0.4
30
0.24
-65 to +150
W
W / °C
°C
A
TIP29C
TIP30C
100
Unit
V
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Page <1>
16/06/12 V1.1
High Power Bipolar Transistors
Tip Series
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
4.167
Unit
°C / W
Figure - 1 Power Derating
P
D,
Power Dissipation (W)
T
C,
Temperature (°C)
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Minimum
Maximum
Unit
Characteristic
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
TIP29A, TIP30A
(I
C
= 30 mA, I
B
= 0)
TIP29C, TIP30C
Collector Cut off Current
(V
CE
= 30 V, I
B
= 0)
(V
CE
= 60 V, I
B
= 0)
Collector Cut off Current
(V
CE
= 60 V, V
EB
= 0)
(V
CE
= 100 V, V
EB
= 0)
Emitter Cut off Current
(V
EB
= 5 V, I
C
= 0)
ON Characteristics (1)
DC Current Gain
(I
C
= 0.2 A, V
CE
= 4 V)
(I
C
= 1 A, V
CE
= 4 V)
Collector-Emitter Saturation Voltage
(I
C
= 1 A, I
B
= 125 mA)
Base-Emitter On Voltage
(I
C
= 1 A, V
CE
= 4 V)
TIP29A, TIP30A
TIP29C, TIP30C
TIP29A, TIP30A
TIP29C, TIP30C
V
CEO (sus)
60
100
-
V
I
CEO
-
0.3
I
CES
-
0.2
mA
I
EBO
-
1
h
FE
40
15
-
-
-
75
0.7
-
V
CE (sat)
V
BE (on)
V
1.3
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Page <2>
16/06/12 V1.1
High Power Bipolar Transistors
Tip Series
Characteristic
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(I
C
= 200 mA, V
CE
= 10 V, f = 1 MHz)
Small Signal Current Gain
(I
C
= 200 mA, V
CE
= 10 V, f = 1 kHz)
(1) Pulse Test: Pulse Width
≤300
µs, Duty Cycle
≤2%
(2) f
T
= | h
FE
|
•
f
Test
Figure - 2 Turn-On Time
Figure - 3 Switching Time Equivalent Circuit
f
T
h
fe
3
20
-
-
MHz
-
Symbol
Minimum
Maximum
Unit
t, Time (µs)
I
C,
Collector Current (A)
R
B
and R
C
Varied to Obtain Desired Current Levels
Figure - 4 DC Current Gain
Figure - 5 Turn-Off Time
h
FE
, DC Current Gain
I
C,
Collector Current (A)
µ
t, Time (µs)
I
C,
Collector Current (A)
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Page <3>
16/06/12 V1.1
High Power Bipolar Transistors
Tip Series
Figure - 6 Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate I
C
- V
CE
limits of the
transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate
The data of figure - 6 curve is based on T
J (PK)
= 150°C; T
C
is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J (PK)
=150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
I
C,
Collector Current (A)
V
CE,
Collector Emitter Voltage (V)
Specification Table
Type
NPN
Part Number
TIP29A
TIP29C
TIP30A
TIP30C
PNP
Important Notice :
This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
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Page <4>
16/06/12 V1.1
ADI Reference Circuit
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