14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Parts packaging code | TO-251 |
package instruction | IN-LINE, R-PSIP-T3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | FAST SWITCHING |
Avalanche Energy Efficiency Rating (Eas) | 91 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 14 A |
Maximum drain current (ID) | 14 A |
Maximum drain-source on-resistance | 0.1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-251 |
JESD-30 code | R-PSIP-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | 240 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 42 W |
Maximum pulsed drain current (IDM) | 56 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
SIHFU020 | IRFR020_10 | SIHFR020-GE3 | SIHFR020TR-GE3 | SIHFU020-GE3 | SIHFR020 | SIHFR020-E3 | SIHFR020T-E3 | SIHFU020-E3 | |
---|---|---|---|---|---|---|---|---|---|
Description | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 2 | 2 | 3 | 2 | 2 | 2 | 3 |
Maximum operating temperature | 150 °C | 150 Cel | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
surface mount | NO | YES | YES | YES | NO | YES | YES | YES | NO |
Terminal form | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Is it lead-free? | Contains lead | - | - | - | - | Contains lead | Lead free | Lead free | Lead free |
Is it Rohs certified? | incompatible | - | - | - | - | incompatible | conform to | conform to | conform to |
Parts packaging code | TO-251 | - | - | - | - | TO-252 | TO-252 | TO-252 | TO-251 |
package instruction | IN-LINE, R-PSIP-T3 | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
Contacts | 3 | - | - | - | - | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | FAST SWITCHING | - | - | - | - | FAST SWITCHING | FAST SWITCHING | FAST SWITCHING | FAST SWITCHING |
Avalanche Energy Efficiency Rating (Eas) | 91 mJ | - | 91 mJ | 91 mJ | 91 mJ | 91 mJ | 91 mJ | 91 mJ | 91 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
Maximum drain current (Abs) (ID) | 14 A | - | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A |
Maximum drain current (ID) | 14 A | - | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A |
Maximum drain-source on-resistance | 0.1 Ω | - | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-251 | - | TO-252AA | TO-252AA | TO-251AA | TO-252 | TO-252 | TO-252 | TO-251 |
JESD-30 code | R-PSIP-T3 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 |
JESD-609 code | e0 | - | - | - | - | e0 | e3 | e3 | e3 |
Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | - | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
Peak Reflow Temperature (Celsius) | 240 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 240 | 260 | 260 | 260 |
Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 42 W | - | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W |
Maximum pulsed drain current (IDM) | 56 A | - | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A |
Certification status | Not Qualified | - | - | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Terminal surface | Tin/Lead (Sn/Pb) | - | - | - | - | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
Maximum time at peak reflow temperature | 30 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 30 | 40 | 40 | 40 |
Maker | - | - | Vishay | Vishay | - | Vishay | Vishay | Vishay | - |