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SIHFU020

Description
14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHFU020 Overview

14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

SIHFU020 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)91 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

SIHFU020 Related Products

SIHFU020 IRFR020_10 SIHFR020-GE3 SIHFR020TR-GE3 SIHFU020-GE3 SIHFR020 SIHFR020-E3 SIHFR020T-E3 SIHFU020-E3
Description 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 2 2 2 3 2 2 2 3
Maximum operating temperature 150 °C 150 Cel 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
surface mount NO YES YES YES NO YES YES YES NO
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - - - - Contains lead Lead free Lead free Lead free
Is it Rohs certified? incompatible - - - - incompatible conform to conform to conform to
Parts packaging code TO-251 - - - - TO-252 TO-252 TO-252 TO-251
package instruction IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 - - - - 3 3 3 3
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FAST SWITCHING - - - - FAST SWITCHING FAST SWITCHING FAST SWITCHING FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas) 91 mJ - 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 14 A - 14 A 14 A 14 A 14 A 14 A 14 A 14 A
Maximum drain current (ID) 14 A - 14 A 14 A 14 A 14 A 14 A 14 A 14 A
Maximum drain-source on-resistance 0.1 Ω - 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251 - TO-252AA TO-252AA TO-251AA TO-252 TO-252 TO-252 TO-251
JESD-30 code R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
JESD-609 code e0 - - - - e0 e3 e3 e3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE - SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 240 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 240 260 260 260
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 42 W - 42 W 42 W 42 W 42 W 42 W 42 W 42 W
Maximum pulsed drain current (IDM) 56 A - 56 A 56 A 56 A 56 A 56 A 56 A 56 A
Certification status Not Qualified - - - - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface Tin/Lead (Sn/Pb) - - - - Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature 30 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 40 40 40
Maker - - Vishay Vishay - Vishay Vishay Vishay -
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