VISHAY
SFH614A
Vishay Semiconductors
Optocoupler, Phototransistor Output, 300 V BV
CEO
Features
• High Isolation Test Voltage, 5300 V
RMS
• High Collector-Emitter Voltage, V
CEO
= 300 V
• Standard Plastic DIP-4 Package
Agency Approvals
• UL File #E52744 System Code H or J
• CSA 93751
i179060
A
1
C
2
4
3
C
E
Description
The SFH614A features a high collector-emitter volt-
age and high isolation voltage. These couplers have
a GaAs infrared emitting diode emitter, which is opti-
cally coupled to a silicon planar phototransistor detec-
tor, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
Order Information
Part
SFH614A
SFH614A-X009
Remarks
CTR > 50 %, DIP-4
CTR > 50 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC Forward current
Surge forward current
Derate linearly from 25 °C
Total power dissipation
P
diss
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
Value
6.0
60
2.5
1.33
100
Unit
V
mA
A
mW/°C
mW
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
t
≤
1.0 ms
Derate linearly from 25 °C
Total power dissipation
P
diss
Test condition
Symbol
V
CEO
V
ECO
I
C
I
C
Value
300
7.0
50
100
2.00
150
Unit
V
V
mA
mA
mW/°C
mW
Document Number 83670
Rev. 1.3, 19-Apr-04
www.vishay.com
1
SFH614A
Vishay Semiconductors
Coupler
Parameter
Derate linearly from 25 °C
Total power dissipation
Isolation test voltage between
input and output, climate acc. to
IEC 60068-1 : 1988 (T = 1.0 s)
Creepage distance
Clearance
Insulation thickness between
emitter and detector
Comparative tracking index acc.
to DIN IEC 112/VDE 0303, part
1 : 06-84
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
P
tot
V
ISO
Test condition
Symbol
Value
3.33
250
5300
VISHAY
Unit
mW/°C
mW
V
RMS
≥
7.0
≥
7.0
≥
0.4
≥
175
mm
mm
mm
≥
10
12
≥
10
11
- 55 to +150
- 55 to +100
100
260
Ω
Ω
°C
°C
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I
F
= 10 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
I
R
C
O
Min
Typ.
1.15
0.02
14
Max
1.5
10
Unit
V
µA
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter dark current
Collector-emitter capacitance
Test condition
I
CE
= 100
µA
I
EC
= 10
µA
V
CE
= 10 V
V
CE
= 10 V, f = 1.0 MHz
Symbol
BV
CEO
BV
ECO
I
CEO
C
CE
Min
300
7.0
15
8.0
1.0
Typ.
Max
Unit
V
V
µA
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Test condition
I
F
= 20 mA, I
C
= 1.0 mA
V
I-O
= 0 V, f = 1.0 MHz
Symbol
V
CEsat
C
C
Min
Typ.
Max
0.3
0.5
Unit
V
V
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2
Document Number 83670
Rev. 1.3, 19-Apr-04
VISHAY
Current Transfer Ratio
Parameter
Current Transfer Ratio
Test condition
I
F
= 10 mA, V
CE
= 10 V
Symbol
CTR
Min
50
Typ.
SFH614A
Vishay Semiconductors
Max
Unit
%
Switching Characteristics
Parameter
Turn on time
Turn off time
Rise time
Fall time
Test condition
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
Ω
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
Ω
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
Ω
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
Ω
Symbol
t
on
t
off
t
r
t
f
Min
Typ.
6.0
6
3.0
5.0
10
12
Max
Unit
µs
µs
µs
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
100.0
Forward Current, IF (mA)
Collector Current, IC (mA)
25
IF = 20 mA
20
15
10
5
0
0
100
200
300
400
500
Collector-Emitter Voltage, VCE (mV)
isfh614a_03
–40°C
25°C
10.0
1.0
100°C
0.1
.01
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Forward Voltage, VF (V)
isfh614a_01
Fig. 1 Forward Current vs. Forward Voltage
Fig. 3 Collector Current vs. Collector Emitter Voltage
10000
Collector Current, IC (mA)
100°C
Collector Current,
IC (mA)
7
6
5
4
3
2
1
0
0
100
200
300
400
500
100°C
IF = 10 mA
–40°C
25°C
1000
100
10
1
0
0
50
100
150
200
250
300
350
Collector-Emitter Voltage, VCE (mV)
25°C
0°C
Collector-Emitter Voltage,
VCE
(mV)
isfh614a_04
isfh614a_02
Fig. 2 Collector-Emitter Dark Current vs. Collector-Emitter
Voltage
Fig. 4 Collector Current vs. Collector Emitter Voltage
Document Number 83670
Rev. 1.3, 19-Apr-04
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3
SFH614A
Vishay Semiconductors
VISHAY
VCC
Input Pulse
10%
90%
tr
ton
tf
t off
Output Pulse
I
F
f = 5.0 kHz
DF = 50%
RL
VO
=V
CE
isfh614a_06
isfh614a_07
Fig. 5 Switching Waveform
Fig. 6 Switching Schematic
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
3°–9°
.300 (7.62) typ.
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
i178027
.008 (.20)
.012 (.30)
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4
Document Number 83670
Rev. 1.3, 19-Apr-04
VISHAY
SFH614A
Vishay Semiconductors
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
.020 (.51)
.040 (1.02)
.012 (.30) typ.
.315 (8.00)
min.
15° max.
18449
Document Number 83670
Rev. 1.3, 19-Apr-04
www.vishay.com
5
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