SF1004G datasheet, PDF - EEWORLD Datasheet

SF1004G: Description5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size89KB，2 Pages; ManufacturerETC1

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5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	GREEN, PLASTIC PACKAGE-3
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	PURE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	COMMON CATHODE, 2 ELEMENTS
Shell connection	CATHODE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
application	EFFICIENCY
Phase	1
Maximum reverse recovery time	0.0350 us
Maximum repetitive peak reverse voltage	200 V
Maximum average forward current	5 A
Maximum non-repetitive peak forward current	125 A

	SF1004G	SF1001G	SF1002G	SF1003G	SF1005G	SF1006G	SF1007G	SF1008G
Description	5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

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