1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
Parameter Name | Attribute value |
Maker | HY Electronic |
package instruction | R-PDSO-C2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JESD-30 code | R-PDSO-C2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Maximum output current | 1 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Maximum repetitive peak reverse voltage | 800 V |
Maximum reverse recovery time | 0.5 µs |
surface mount | YES |
Terminal form | C BEND |
Terminal location | DUAL |
RS1K | RS1J | RS1M | |
---|---|---|---|
Description | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC | SIGNAL DIODE | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC |
Maker | HY Electronic | HY Electronic | HY Electronic |
package instruction | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 |
Reach Compliance Code | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 |
Configuration | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 |
Number of components | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C |
Maximum output current | 1 A | 1 A | 1 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Maximum repetitive peak reverse voltage | 800 V | 800 V | 1000 V |
Maximum reverse recovery time | 0.5 µs | 0.5 µs | 0.5 µs |
surface mount | YES | YES | YES |
Terminal form | C BEND | C BEND | C BEND |
Terminal location | DUAL | DUAL | DUAL |