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RS1B

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size595KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
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RS1B Overview

SIGNAL DIODE

RS1B Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
Reverse Voltage - 50 to 1000 Volts
SURFACE MOUNT FAST RECOVERY RECTIFIER
RS1A THRU RS1M
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
SMA(DO-214AC)
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
MECHANICAL DATA
Case
: JEDEC DO-214AC molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90
C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25
C
at rated DC blocking voltage
T
A
=100
C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
RS1A RS1B RS1D RS1G RS1J
RS1K RS1M
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.3
5.0
50.0
600
420
600
800
560
800
1000
700
1000
150
250
15.0
50.0
-65 to +150
500
ns
pF
C
/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2
(5.0x5.0mm) copper pad areas

RS1B Related Products

RS1B RS1A RS1D RS1G RS1J RS1K
Description SIGNAL DIODE 0.7 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
state ACTIVE ACTIVE - ACTIVE ACTIVE ACTIVE
Diode type SIGNAL DIODE SIGNAL DIODE - Signal diode Signal diode SIGNAL DIODE
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