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MT41K256M16TW-107:PTR

Description
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA T/R
File Size3MB,217 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT41K256M16TW-107:PTR Overview

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA T/R

MT41K256M16TW-107:PTR Parametric

Parameter NameAttribute value
EU restricts the use of certain hazardous substancesCompliant
ECCN (US)EAR99
Part StatusUnconfirmed
HTS8542.32.00.36
DRAM TypeDDR3L SDRAM
Chip Density (bit)4G
Organization256Mx16
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Data Bus Width (bit)16
Maximum Clock Rate (MHz)1866
Maximum Access Time (ns)0.195
Address Bus Width (bit)18
Process TechnologyCMOS
Minimum Operating Supply Voltage (V)1.283
Typical Operating Supply Voltage (V)1.35
Maximum Operating Supply Voltage (V)1.45
Operating Current (mA)130
Minimum Operating Temperature (°C)0
Maximum Operating Temperature (°C)95
Supplier Temperature GradeCommercial
Number of I/O Lines (bit)16
PackagingTape and Reel
Supplier PackageFBGA
Pin Count96
Standard Package NameBGA
MountingSurface Mount
Package Height0.92
Package Length14
Package Width8
PCB changed96
Lead ShapeBall
4Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev :E) data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of 105°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
– 16ms, 8192-cycle refresh at >95°C to 105°C
Options
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E
– 78-ball (7.5mm x 10.6mm) Rev. N
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
– 96-ball (7.5mm x 13.5mm) Rev. N
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Operating temperature
– Commercial (0°C T
C
+95°C)
– Industrial (–40°C T
C
+95°C)
– Automotive (–40°C T
C
+105°C)
• Revision
Marking
1G4
512M8
256M16
RH
RG
DA
HA
LY
TW
-093
-107
-125
None
IT
AT
:E/:N/:P
Table 1: Key Timing Parameters
Speed Grade
-093
1, 2
-107
1
-125
Notes:
Data Rate (MT/s)
2133
1866
1600
Target
t
RCD-
t
RP-CL
14-14-14
13-13-13
11-11-11
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.09
13.91
13.75
13.09
13.91
13.75
13.09
13.91
13.75
1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT41K256M16TW-107:PTR MT41K256M16TW-107:P
Description DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA T/R DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA Tray
EU restricts the use of certain hazardous substances Compliant Compliant
ECCN (US) EAR99 EAR99
Part Status Unconfirmed Active
HTS 8542.32.00.36 8542.32.00.36
DRAM Type DDR3L SDRAM DDR3L SDRAM
Chip Density (bit) 4G 4G
Organization 256Mx16 256Mx16
Number of Internal Banks 8 8
Number of Words per Bank 32M 32M
Number of Bits/Word (bit) 16 16
Data Bus Width (bit) 16 16
Maximum Clock Rate (MHz) 1866 1866
Maximum Access Time (ns) 0.195 0.195
Address Bus Width (bit) 18 18
Process Technology CMOS CMOS
Minimum Operating Supply Voltage (V) 1.283 1.283
Typical Operating Supply Voltage (V) 1.35 1.35
Maximum Operating Supply Voltage (V) 1.45 1.45
Operating Current (mA) 130 130
Maximum Operating Temperature (°C) 95 95
Supplier Temperature Grade Commercial Commercial
Number of I/O Lines (bit) 16 16
Packaging Tape and Reel Tray
Supplier Package FBGA FBGA
Pin Count 96 96
Standard Package Name BGA BGA
Mounting Surface Mount Surface Mount
Package Height 0.92 0.92
Package Length 14 14
Package Width 8 8
PCB changed 96 96
Lead Shape Ball Ball
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