SPU07N20 datasheet, PDF - EEWORLD Datasheet

SPU07N20: DescriptionSIPMOS Power Transistor; CategoryDiscrete semiconductor The transistor; File Size118KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPU07N20 Overview

SIPMOS Power Transistor

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-251
package instruction	PLASTIC, TO-251, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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