NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (D
2
PAK)
P75N02LD
D
PRODUCT SUMMARY
V
(BR)DSS
25
R
DS(ON)
5mΩ
I
D
75A
1. GATE
2. DRAIN
3. SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.1mH
L = 0.05mH
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
GS
I
D
I
DM
I
AR
E
AS
E
AR
P
D
T
j
, T
stg
T
L
LIMITS
±20
75
50
170
60
140
5.6
65
38
-55 to 150
275
mJ
A
UNITS
V
W
Operating Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1
2
°C
SYMBOL
R
θJC
R
θJA
R
θCS
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
0.6
Pulse width limited by maximum junction temperature.
Duty cycle
≤
1％
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
25
1
1.5
3
±250
25
250
V
nA
µA
LIMITS
UNIT
MIN TYP MAX
1
AUG-02-2001
NIKO-SEM
On-State Drain Current
1
Drain-Source On-State
Resistance
1
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
I
D(ON)
R
DS(ON)
g
fs
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 30A
V
GS
= 7V, I
D
= 24A
V
DS
= 15V, I
D
= 30A
DYNAMIC
70
TO-252 (D
2
PAK)
P75N02LD
A
5
6
16
7
8
mΩ
S
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V, R
L
= 1Ω
I
D
≅
30A, V
GS
= 10V, R
GS
= 2.5Ω
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 35A
V
GS
= 0V, V
DS
= 15V, f = 1MHz
5000
1800
800
140
40
75
7
7
24
6
nS
nC
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, dl
F
/dt = 100A /
µS
I
F
= I
S
, V
GS
= 0V
37
200
0.043
75
170
1.3
A
V
nS
A
µC
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
1
2
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2％.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P75N02LD”, DATE CODE or LOT #
2
AUG-02-2001
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (D
2
PAK)
P75N02LD
TO-252 (DPAK) MECHANICAL DATA
mm
Min.
9.35
2.2
0.48
0.89
0.45
0.03
6
Typ.
Max.
10.1
2.4
0.6
1.5
0.6
0.23
6.2
mm
Min.
Typ.
0.8
6.4
5.2
0.6
0.64
4.4
6.6
5.4
1
0.9
4.6
Max.
Dimension
A
B
C
D
E
F
G
Dimension
H
I
J
K
L
M
N
3
AUG-02-2001
京公网安备 11010802033920号
EEWORLD
