EEWORLDEEWORLDEEWORLD

Part Number

Search

SH400Q21D

Description
Silicon Controlled Rectifier, 628 A, 1200 V, SCR
CategoryAnalog mixed-signal IC    Trigger device   
File Size66KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SH400Q21D Overview

Silicon Controlled Rectifier, 628 A, 1200 V, SCR

SH400Q21D Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH SPEED
Nominal circuit commutation break time80 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current260 mA
Maximum DC gate trigger voltage3.5 V
Maximum holding current300 mA
JESD-30 codeO-CEDB-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current628 A
Maximum repetitive peak off-state leakage current20000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR

SH400Q21D Related Products

SH400Q21D AL03006-165.9-55-K SH400U21D
Description Silicon Controlled Rectifier, 628 A, 1200 V, SCR NTC Diode Thermometrics Thermistors Silicon Controlled Rectifier, 628 A, 1600 V, SCR
Maker Toshiba Semiconductor - Toshiba Semiconductor
package instruction DISK BUTTON, O-CEDB-N2 - DISK BUTTON, O-CEDB-N2
Reach Compliance Code unknown - unknown
ECCN code EAR99 - EAR99
Other features HIGH SPEED - HIGH SPEED
Nominal circuit commutation break time 80 µs - 80 µs
Configuration SINGLE - SINGLE
Critical rise rate of minimum off-state voltage 200 V/us - 200 V/us
Maximum DC gate trigger current 260 mA - 260 mA
Maximum DC gate trigger voltage 3.5 V - 3.5 V
Maximum holding current 300 mA - 300 mA
JESD-30 code O-CEDB-N2 - O-CEDB-N2
Number of components 1 - 1
Number of terminals 2 - 2
Maximum operating temperature 125 °C - 125 °C
Minimum operating temperature -40 °C - -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape ROUND - ROUND
Package form DISK BUTTON - DISK BUTTON
Certification status Not Qualified - Not Qualified
Maximum rms on-state current 628 A - 628 A
Maximum repetitive peak off-state leakage current 20000 µA - 20000 µA
Off-state repetitive peak voltage 1200 V - 1600 V
Repeated peak reverse voltage 1200 V - 1600 V
surface mount YES - YES
Terminal form NO LEAD - NO LEAD
Terminal location END - END
Trigger device type SCR - SCR

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号