BFR181 datasheet, PDF - EEWORLD Datasheet

BFR181: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size60KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFR181 Overview

RF SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-based maximum capacity	0.45 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
highest frequency band	L BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.175 W
Maximum power dissipation(Abs)	0.175 W
Minimum power gain (Gp)	18 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz

	BFR181	Q62702-F1314
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR

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