MX29LV008C T/B
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
3V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55R/70/90ns
•
Fully compatible with MX29LV008BT/BB device
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX29LV008C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits. MXIC's Flash memo-
ries offer the most cost-effective and reliable read/write
non-volatile random access memory. The MX29LV008C
T/B is packaged in 40-pin TSOP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV008C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV008C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV008C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV008C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM1185
REV. 1.0, JUN. 30, 2005
1
Special Edition for Assessment Centres
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