BF2040W datasheet, PDF - EEWORLD Datasheet

BF2040W: DescriptionSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V); CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BF2040W Overview

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Maximum drain current (ID)	0.04 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

	BF2040W	Q62702-F1776
Description	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

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