High Voltage
Power MOSFET
IXTY02N50D
IXTU02N50D
IXTP02N50D
D
V
DSX
I
D25
R
DS(on)
=
=
500V
200mA
30
N-Channel
TO-252 (IXTY)
G
S
G
S
D (Tab)
TO-251 (IXTU)
Symbol
V
DSX
V
DGX
V
GSX
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-251
TO-220
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
J
T
C
= 25C
T
A
= 25C
Maximum Ratings
500
500
20
30
200
800
25
1.1
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
0.35
0.40
3.00
V
V
V
V
mA
mA
W
W
C
C
C
°C
°C
Nm/lb.in.
g
g
g
G
G
D
S
D (Tab)
TO-220AB (IXTP)
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Low R
DS(on)
HDMOS
TM
Process
• Rugged Polysilicon Gate Cell Structure
• Fast Switching Speed
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
Level Shifting
Triggers
Solid State Relays
Current Regulators
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= -10V, I
D
= 25A
V
DS
= 25V, I
D
= 25A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= -10V
V
GS
= 0V, I
D
= 50mA, Note 1
V
GS
= 0V, V
DS
= 25V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
500
- 2.5
- 5.0
V
V
100
nA
10
A
250
A
20
250
30
mA
© 2017 IXYS CORPORATION, All Rights Reserved
DS98861C(5/17)
IXTY02N50D
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
Resistive Switching Times
V
GS
=
5V,
V
DS
= 100V, I
D
= 50mA
R
G
= 30 (External)
V
GS
= -10V, V
DS
= 25V, f = 1MHz
V
DS
= 50V, I
D
= 200mA, Note 1
Characteristic Values
Min.
Typ.
Max.
100
150
120
25
5
9
4
28
45
mS
pF
pF
pF
ns
ns
ns
ns
5.0
C/W
C/W
IXTU02N50D
IXTP02N50D
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
SD
t
rr
I
F
= 200mA, V
GS
= -10V, Note 1
I
F
= 750mA, -di/dt = 100A/s
V
R
= 25V, V
GS
= -10V
Characteristic Values
Min.
Typ.
Max.
0.7
1.5
1.0
V
μs
Note 1. Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY02N50D
TO-252 AA (IXTY) Outline
TO-251 AA (IXTU) Outline
IXTU02N50D
IXTP02N50D
TO-220 (IXTP) Outline
1. Gate; 2,4. Drain; 3. Source
1. Gate; 2,4. Drain; 3. Source
1. Gate; 2,4. Drain; 3. Source
© 2017 IXYS CORPORATION, All Rights Reserved
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
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