QDR SRAM
Parameter Name | Attribute value |
Maker | Renesas Electronics Corporation |
package instruction | LBGA, |
Reach Compliance Code | compli |
ECCN code | 3A991.B.2.A |
Maximum access time | 0.45 ns |
JESD-30 code | R-PBGA-B165 |
length | 15 mm |
memory density | 75497472 bi |
Memory IC Type | QDR SRAM |
memory width | 36 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 2097152 words |
character code | 2000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 2MX36 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Maximum seat height | 1.4 mm |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
width | 13 mm |