BC856 datasheet, PDF - EEWORLD Datasheet

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BC856: DescriptionBipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃; CategoryDiscrete semiconductor Bipolar transistor; File Size2MB，4 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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BC856 Overview

Bipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃

BC856 Parametric

Parameter Name	Attribute value
polarity	PNP
Collector-emitter breakdown voltage	65
Collector Current - Continuous	0.1
DC current gain - Min	125
DC current gain - Max	475
Transition frequency	100
Package	SOT-23
Storage Temperature Range	-55-150
class	Transistors

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BC856/857/858

PNP

general purpose Transistor

FEATURES

Low current.(max.100mA).

Low voltage..

SOT-23

Dim

Min

2.70

1.10

Max

3.10

1.50

APPLICATIONS

General purpose switching and amplification.

1.0 Typical

0.4 Typical

0.35

1.80

0.02

2.20

0.48

2.00

0.1

2.60

ORDERING INFORMATION

Type No.

BC856A/B

BC857A/B/C

BC858A/B/C

Marking

3A/3B

3E/3F/3G

3J/3K/3L

Package Code

SOT-23

0.1 Typical

All Dimensions in mm

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

Collector-Emitter Voltage

CEO

EBO

stg

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

Parameter

Collector-Base Voltage

BC856

BC857

BC858

BC856

BC857

BC858

Value

-80

-50

-30

-65

-45

-30

-5

-0.1

250

-65 to +150

Units

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Parameter

Collector-base breakdown voltage

BC856

BC857

BC858

Symbol Test conditions

MIN TYP MAX

-80

-50

-30

-65

-45

-30

-5

-1

-15

-0.1

125

220

420

250

475

800

-0.65

-0.3

-0.7

-0.85

-0.6 -0.65 -0.75

-0.82

4.5

UNIT

(BR)CBO

=-10μA,I

Collector-emitter breakdown voltage BC856

BC857 V

(BR)CEO

BC858

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

BC856A,857A,858A

BC856B,857B,858B

BC857C,858C

(BR)EBO

CBO

EBO

=-10mA,I

=-1μA,I

=-30V,I

=-5V,I

μA

=-5V,I

=-2mA

Collector-emitter saturation voltage

CE(sat)

=-100mA, I

=-5mA

=-10mA, I

=-0.5mA

=-10mA, I

=-0.5mA

=-100mA, I

=-5mA

=-2mA,V

=-5V

=-10mA,V

=-5V

=-10V,I

f=1MHz

=-200uA,V

=-5V,

=2kΩ,f=1kHz,

B=200Hz

=-5V, I

= -10mA

f=100MHz

100

Base-emitter saturation voltage

BE(sat)

Base-emitter voltage

BE(on)

collector capacitance

Transition frequency

MHz

Revision:20170701-P1

www.lgesemi

mail:lge@lgesemi.com

BC856 Related Products

	BC856	BC857	BC858
Description	Bipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃	Bipolar transistor, 45V, 0.1A, 100MHZ, -55-150℃	Bipolar transistor, 30V, 0.1A, 100MHZ, -55-150℃
polarity	PNP	PNP	PNP
Collector-emitter breakdown voltage	65	45	30
Collector Current - Continuous	0.1	0.1	0.1
DC current gain - Max	475	800	800
Transition frequency	100	100	100
Package	SOT-23	SOT-23	SOT-23
Storage Temperature Range	-55-150	-55-150	-55-150
class	Transistors	Transistors	Transistors
DC current gain - Mi	-	125	125

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