MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
Features:
MEMS Technology
Direct pin to pin drop-in replacement for industry-standard packages
Ultra-low phase jitter: 0.5 pSec (12 kHz to 20 MHz)
LVCMOS/HCMOS Compatible Output
Industry-standard package 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm
Pb-free, RoHS and REACH compliant
Fast delivery times
IM810 Series
Typical Applications:
Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Electrical Specifications:
Frequency Range
Frequency Stability
First Year Aging
10 Years Aging
Operating Temperature
Supply Voltage (Vdd) ±10%
Current Consumption
OE Disable Current
Standby Current
Waveform Output
Symmetry
Rise / Fall Time
Logic “1”
Logic “0”
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Time
RMS Period Time (random)
1.000 MHz to 80.000MHz
See Part Number Guide
±1.5 ppm
±5.0 ppm
See Part Number Guide
See Part Number Guide
31 mA typ./ 33 mA max
29 mA typ./ 31mA max
31 mA max
30 mA max
70 µA max
10 µA max
LVCMOS/HCMOS
45%/55%
1.2 nSec typ./ 2.0 nSec max
90% of Vdd min
10% of Vdd max
70% of Vdd min
30% of Vdd max
100 kΩ typ./ 250 kΩ max
2.0 MΩ min
7 mSec typ./ 10 mSec max
150 nSec max
6 mSec typ./ 10 mSec max
1.5 pSec typ./ 2.0 pSec max
2.0 pSec typ./ 3.0 pSec max
0.5 pSec typ./ 1.0 pSec max
Inclusive of Initial Tolerance, Operating Temperature Range, Load, and Voltage.
At + 25ºC ±2ºC
At + 25ºC ±2ºC
No load condition, F = 20 MHz, Vdd = +2.5 V, +2.8 V or +3.3 V
No load condition, f = 20 MHz, Vdd = +1.8V
Vdd = +2.5 V, +2.8 V or 3.3 V, OE = GND
Vdd = +1.8 V, OE = GND
Vdd = +2.5 V, +2.8 V or 3.3 V,
ST
= GND
Vdd = +1.8 V,
ST
= GND
50% of waveform
15 pF Load, 10% to 90% of Vdd
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic low, or
ST
logic high
Pin 1,
ST
logic low
Measured from the time Vdd reaches its rated minimum values
F = 80 MHz, For other frequencies, T_oe = 100 nSec = 3 cycles
In standby mode, measured from the time
ST
pin crosses 50% threshold.
F = 75 MHz, all Vdds
F = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz
Notes:
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
Typical values are at +25ºC and nominal supply voltage.
Absolute Maximum Limits
Storage Temperature
Supply Voltage (Vdd)
Electrostatic Discharge
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
260ºC max
150ºC max
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 01/30/16_A
Page 1 of 8
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
IM810 Series
Ordering Information:
Part Number Guide
Packages
IM810B – 5.0 x 3.2
IM810C – 3.2 x 2.5
IM810D – 2.5 x 2.0
Input Voltage
1 = +1.8 V
6 = +2.5 V
2 = +2.8 V
7 = +3.0 V
3 = +3.3 V
Operating
Temperature
1 = 0ºC to +70ºC
2 = -40ºC to +85ºC
3 = -20ºC to +70ºC
Output Drive
Strength
- = Default
(see tables 2
through 4)
Stability
(ppm)
E - ±10
F = ±20
A = ±25
B = ±50
Select Function
H = Tri-state
S = Standby
-
Frequency
Frequency
Sample Part Number:
IM810C-62-FS-10.0000MHz
This 10.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive
Strength (Rise and Fall Time) is 2.00 nSec per Table 3 with 30 pF load. With Pin 1 function as Standby
Sample Part Number:
IM810B-23FAH-66.0000MHz
This 66.0000 MHz oscillator in a 5.0 x 3.2 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.8 V. The Output Drive
Strength (Rise and Fall Time) is 1.29 nSec per Table 1 with 15 pF load. With Pin 1 function as Tri-state
Notes:
Not all options are available at all frequencies and temperatures ranges.
Please consult with sales department for any other parameters or options.
Oscillator specification subject to change without notice.
Phase Noise:
Figure 1: Phase Noise, 10 MHz, +3.0 V LVCMOS Output
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 01/30/16_A
Page 2 of 8
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
Performance Plots:
IM810 Series
Figure 2: Idd vs Frequency
Figure 3: RMS Period vs Frequency
Figure 4: Duty Cycle vs Frequency
Figure 5: RMS Phase Jitter vs Frequency
Figure 6: Idd vs Temperature, 10 MHz Output
Firgure 7: Rise Time vs Temperature, 75 MHz Output
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 01/30/16_A
Page 3 of 8
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
Test Circuit
Waveform
IM810 Series
Environmental Specifications:
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL Level 1 at +260ºC
Pb Free Solder Reflow Profile
Ts max to T
L
(Ramp-up Rate)
Preheat
Temperature min (Ts min)
Temperature typ (Ts typ)
Temperature max (Ts max)
Time (Ts)
Ramp-up Tate (T
L
to Tp
Time Maintained Above
Temperature (T
L
)
Time (T
L)
Peak Temperature (Tp)
Time within 5ºC to Peak
Temperature (Tp)
Ramp-down Rate
Tune 25ºC to Peak
Temperature
Moisture Sensitivity Level
(MSL)
3ºC / second max
150ºC
175ºC
200ºC
60 to180 seconds
3ºC / second max
217ºC
60 to 150 seconds
260ºC max for seconds
20 to 40 seconds
6ºC / second max
8 minute max
Level 1
Units are backward compatible with +240ºC reflow processes
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 01/30/16_A
Page 4 of 8
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
IM810 Series
Pin Functionally
Pin
Symbol
OE
1
ST
Standby
Tri-state
Pin Description
Functionality
High or Open = specified frequency output
Low = Output is high impedance, only output is disabled.
High or Open = specified frequency output.
Low = Output is low. Device goes to sleep mode. Supply current
reduces to standby current.
Electrical ground
Oscillator output
Power supply voltage
Pin Assignments
OE
1
ST
Top View
4
Vdd
2
GND
Power
3
Out
Output
4
Vdd
Power
Notes:
1. In OE or
ST
mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally
driven
2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.
GND 2
3
OUT
Timing Diagrams:
Figure 8: Startup Timing (OE/
Mode)
Figure 9: Standby Resume Timing (
Mode Only)
Figure 10: OE Enable Timing (OE Mode Only)
Figure 11: OE Disable Timing (OE Mode Only)
Notes:
IM810 supports gated output which is accurate within rated frequency stability from the first cycle
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 01/30/16_A
Page 5 of 8
RF/Wirelessly
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