Semiconductor
STA124S
PNP Silicon Transistor
Features
•
Suitable for low voltage large current drivers
•
High DC current gain and large current capability
•
Complementary pair with STD123S
Ordering Information
Type NO.
STA124S
Marking
124
Package Code
SOT-23
Outline Dimensions
2.4±0.1
1.30±0.1
unit :
mm
1
1.90 Typ.
3
2
0.4 Typ.
0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2100-000
0.124
+0.05
PIN Connections
1. Base
2. Emitter
3. Collector
0.38
0~0.1
-0.03
1
STA124S
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
(Ta=25° C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C *
T
j
T
stg
Ratings
-15
-12
-6.5
-1
350
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-1V, I
C
=-100mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
Min.
-15
-12
-6.5
-
-
200
-
-
-
Typ.
-
-
-
-
-
-
-0.2
260
5
Max.
-
-
-
-0.1
-0.1
450
-0.4
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
KST-2100-000
2
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