STB55NF03L datasheet, PDF - EEWORLD Datasheet

STB55NF03L: DescriptionN-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size78KB，8 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STB55NF03L Overview

N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	D2PAK
package instruction	D2PAK-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	55 A
Maximum drain current (ID)	55 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	80 W
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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