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2731-115M

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size96KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2731-115M Overview

Transistor

2731-115M Parametric

Parameter NameAttribute value
Objectid106563820
package instruction,
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)15 A
ConfigurationSINGLE
Minimum DC current gain (hFE)18
Number of components1
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)575 W
surface mountYES

2731-115M Related Products

2731-115M
Description Transistor
Objectid 106563820
Contacts 2
Reach Compliance Code compliant
ECCN code EAR99
Maximum collector current (IC) 15 A
Configuration SINGLE
Minimum DC current gain (hFE) 18
Number of components 1
Maximum operating temperature 200 °C
Polarity/channel type NPN
Maximum power dissipation(Abs) 575 W
surface mount YES

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