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HI10387

Description
80V 10A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size46KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HI10387 Overview

80V 10A NPN epitaxial planar transistor

Features

Product Name: 80V 10A NPN Epitaxial Planar Transistor


Product model: HI10387


Product Description:


The HI10387 is designed for general-purpose amplifier and low-speed switching applications.



parameter:


Type: NPN


BVCEO: 80V


IC: 10A


PD: 20W


hFE: MIN 2000


hFE: Max. 20000


VCE(sat): Max. 2V


RoHS: PF(lead-free)


Package: TO-251


HI10387 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9028
Issued Date : 1994.01.25
Revised Date : 2004.07.13
Page No. : 1/4
HI10387
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI10387 is designed for general-purpose amplifier and low-speed switching
applications.
TO-251
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................................................. -55~+150
°C
Junction Temperature ...................................................................................................................... 150°C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 65 W
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 2 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 80 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 80 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ............................................................................................................................................. 10 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
I
CEO
I
CEV
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
VBE(on)1
V
BE(on)2
V
FEC
h
FE1
h
FE2
Min.
80
-
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
100
2
1
300
2
3
1.5
2
2.8
4.5
3
20
-
Unit
V
uA
mA
mA
uA
V
V
V
V
V
V
V
K
I
C
=200mA
V
CB
=160V
V
EB
=5V
V
CE
=80V
V
CE
=80V, V
BE(Off)
=1.5V
I
C
=5A, I
B
=10mA
I
C
=10A, I
B
=100mA
I
C
=5A, I
B
=2.5mA
I
C
=5A, I
B
=5mA
VCE=3V, IC=5A
V
CE
=3V, I
C
=10A
I
C
=5A
I
C
=5A, V
CE
=3V
V
CE
=3V, I
C
=10A
Test Conditions
Classification Of VCE(sat)1
Rank
V
CE(sat)1
KA
<1.5, BV
CEO
>130V
KB
<1.1V
KC
<1.3V
NORMAL
<2V
HI10387
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