GS1M datasheet, PDF - EEWORLD Datasheet

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GS1M: DescriptionSURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER Surface mount glass passivated silicon rectifier; CategoryDiscrete semiconductor; File Size278KB，2 Pages; ManufacturerHORNBY; Websitehttp://www.hornby.com.cn/; Nantong Kangbi Electronics Co., Ltd. specializes in manufacturing power devices such as rectifier diodes, surface mounted diodes, silicon bridge rectifiers, MOS tubes, etc. After more than 20 years of development, the annual production of semiconductor device finished parts has reached 6 billion pieces. It has now become a semiconductor device supplier integrating R&D, production and service, providing semiconductor parts and related services to customers all over the world. The company has passed ISO9001, ISO14001, TS16949, OHSAS18001, UL and other international certifications. At the same time, it has also been recognized by many well-known international and domestic companies, such as Haier, Huawei, Foxconn, Omron, AOC, Skyworth, Samsung, Huntkey, AGASTYA, YUKITA, MERITEK, SUNPOWER, etc. The products are widely used in various consumer electronics, communication electronics, home appliances, energy-saving lighting, automotive electronics, wind energy, solar photovoltaic and other industries. The new generation of energy-saving and ultra-low power consumption devices have been widely used in the partners' 6-level energy-efficient power supply products; SMD patch products use automated equipment and appearance inspection systems to ensure product quality; the company has the core chip R&D and production capabilities and can customize products according to customer needs.

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GS1M Overview

SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER Surface mount glass passivated silicon rectifier

Features

Product Name: SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER

Product model: GS1M

Product Description:

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

? For surface mounted applications

? Low profile package

? Easy pick and place

? Built-in strain relief

? Low forward voltage drop

? High temperature soldering : 250°C /10 seconds at terminals

parameter:

Vrrm (maximum reverse peak voltage): 1000V

Io (maximum average forward current): 1A

(Maximum forward surge current): 30A

IF (maximum forward current): 1A

VF (maximum forward voltage): 1.1V

IR (reverse DC current): 5?A TA=25 C

100??A TA=125 C

Package：DO214-AC(SMA)

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GS1A THRU GS1M

SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER

REVERSE VOLTAGE:

FORWARD CURRENT:

FEATURES

· Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

· For surface mounted applications

· Low profile package

· Easy pick and place

· Built-in strain relief

· Low forward voltage drop

· High temperature soldering : 250°C /10 seconds at terminals

DO214-AC(SMA)

50 to 1000 VOLTS

1.0 AMPERE

MECHANICAL DATA

Case: Molded plastic, DO-214AC(SMA)

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026 guaranteed

Polarity: Color band denotes cathode end

Packaging: 12mm tape per EIA STD RS-481

Weight: 0.002 ounce, 0.064 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Ratings at 25

℃

ambient temperature unless otherwise specified.

Single phase, half wave, 60H

, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbols

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T

=75℃

Peak Forward Surge Current,

8.3ms single half-sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage at 1.0A

Maximum Reverse Current

at Rated DC Blocking Voltage

at T

=25℃

=125℃

θJA

Tstg

FSM

RRM

RMS

(AV)

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K

GS1M

Units

Volts

Amp

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

1.1

5.0

100

2.5

-55 to +150

Amp

Volts

μAmp

℃/W

μS

℃

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Maximum Reverse Recovery Time (Note 3)

Operating Junction Temperature Range

Storage Temperature Range

NOTES:

1- Measured at 1 MH

and applied reverse voltage of 4.0 VDC.

2- Thermal resistance from junction to ambient mounted on P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad areas

3- Reverse Recovery Test Conditions：I

=.5A，I

=1A，I

=.25A.

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