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1S2

Description
Super Fast Rectifier Super fast recovery diode
CategoryDiscrete semiconductor   
File Size129KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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1S2 Overview

Super Fast Rectifier Super fast recovery diode

Features

Product Name: Super Fast Rectifier Super Fast Recovery Diode


Product model: 1S2


product features:


Io: 1.0A


VRRM: 50V-600V


High forward surge current capability


High surge forward current capability



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 100V



Average Forward Current IF(AV) Average forward current: 1.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A



Junction Temperature TJ Junction temperature: -55 to +125 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=1.0A) VFM Forward peak voltage: 0.95V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA


IRRM2 (Ta=125℃) Reverse peak current: 50μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-A Thermal Resistance (Typical) :50 ℃/W



Package: R-1


1S2 Preview

Download Datasheet
1S1 THRU 1S8
超快恢复二极管
Super Fast Rectifier
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
R-1
.130(3.30)
.118(3.00)
1.0(25.4)
MIN
1.0(25.4)
MIN
●I
o
1.0A
●VRRM
50V-600V
耐正向浪涌电流½力高
●High
surge current capability
■用途
Applications
.080(2.00)
.021(0.53)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
Unit: in inches (millimeters)
符号
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
单½
Unit
V
A
条件
Conditions
1
50
正弦半波
60Hz,电阻负½½,Ta=50
60Hz Half-sine wave, Resistance
load, Ta=50℃
正弦半波
60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave,1 cycle,
Ta=25℃
1S
2
100
3
150
4
200
5
300
6
400
7
500
DIA
●整流用
Rectifier
.107(2.70)
.025(0.64)
8
600
1.0
30
-55~+125
-55 ~ +150
A
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
反向恢复时间
Reverse Recovery time
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
FM
I
RRM1
I
RRM2
t
rr
R
θ
J-A
单½
Unit
V
μA
ns
/W
测试条件
Test Condition
I
FM
=1.0A
V
RM
=V
RRM
Ta=25℃
1SF
1
2
0.95
5
50
35
50
3
4
5
1.3
6
7
1.7
8
Ta=125℃
I
F
=0.5A I
R
=1A
I
RR
=0.25A
结和环境之间
Between junction and ambient
Document Number 0149
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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