Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 1 Element, TO-48, TO-48, 2 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-48 |
package instruction | POST/STUD MOUNT, O-MUPM-D2 |
Contacts | 2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | ANODE |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 30 V/us |
Maximum DC gate trigger current | 40 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 50 mA |
JEDEC-95 code | TO-48 |
JESD-30 code | O-MUPM-D2 |
Maximum leakage current | 6.5 mA |
On-state non-repetitive peak current | 150 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum on-state current | 25000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -65 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum rms on-state current | 25 A |
Off-state repetitive peak voltage | 50 V |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
Trigger device type | SCR |
Base Number Matches | 1 |
Part Number | Manufacturer | Description |
---|---|---|
2N681 | Digitron | 25 and 35 Amp RMS SCRs |
JANTX2N682 | Semitronics Corp | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2 |
2N681PBF | International Rectifier ( Infineon ) | Silicon Controlled Rectifier, 25A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-208AA |
2N681LEADFREE | Central Semiconductor | Silicon Controlled Rectifier, 25A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-48, TO-48, 2 PIN |
2N682PBF | International Rectifier ( Infineon ) | Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-208AA |
2N682LEADFREE | Central Semiconductor | Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-48, TO-48, 2 PIN |
SPS025 | Hutson Industries | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element |