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IRGCH50FEPBF

Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size19KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRGCH50FEPBF Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGCH50FEPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFAST SPEED
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

IRGCH50FEPBF Related Products

IRGCH50FEPBF IRGCH50FE
Description Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
package instruction UNCASED CHIP, R-XUUC-N2 DIE-2
Reach Compliance Code compli unknown
ECCN code EAR99 EAR99
Other features FAST SPEED FAST SPEED
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE SINGLE
JESD-30 code R-XUUC-N2 R-XUUC-N2
Number of components 1 1
Number of terminals 2 2
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON

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