Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Infineon |
package instruction | UNCASED CHIP, R-XUUC-N2 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Other features | FAST SPEED |
Collector-emitter maximum voltage | 1200 V |
Configuration | SINGLE |
JESD-30 code | R-XUUC-N2 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | UNCASED CHIP |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
IRGCH50FEPBF | IRGCH50FE | |
---|---|---|
Description | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 |
Is it Rohs certified? | conform to | incompatible |
Maker | Infineon | Infineon |
package instruction | UNCASED CHIP, R-XUUC-N2 | DIE-2 |
Reach Compliance Code | compli | unknown |
ECCN code | EAR99 | EAR99 |
Other features | FAST SPEED | FAST SPEED |
Collector-emitter maximum voltage | 1200 V | 1200 V |
Configuration | SINGLE | SINGLE |
JESD-30 code | R-XUUC-N2 | R-XUUC-N2 |
Number of components | 1 | 1 |
Number of terminals | 2 | 2 |
Package body material | UNSPECIFIED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | UNCASED CHIP | UNCASED CHIP |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
surface mount | YES | YES |
Terminal form | NO LEAD | NO LEAD |
Terminal location | UPPER | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON |