HFA04SD60SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
FEATURES
•
•
•
•
•
•
•
•
Ultrafast recovery time
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Guaranteed avalanche
Specified at operating temperature
Lead (Pb)-free
Designed and qualified for Q101 level
Available
2
RoHS*
COMPLIANT
D-PAK
1
N/C
3
Anode
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
PRODUCT SUMMARY
V
R
V
F
at 4 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
600 V
1.8 V
4A
17 ns
150 °C
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 116 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
4
25
16
10
- 55 to 150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 4 A
I
F
= 8 A
I
F
= 4 A, T
J
= 125 °C
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
µA
pF
nH
V
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94034
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
HFA04SD60SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/µA, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
17
28
38
2.9
3.7
40
70
280
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
A
ns
UNITS
Reverse recovery charge
nC
Rate of fall of recovery current
dI
(rec)M
/dt
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Soldering temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
Case style D-PAK
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA
Typical socket mount
10 s
TEST CONDITIONS
MIN.
- 55
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
-
2.0
0.07
-
MAX.
150
240
5.0
80
-
-
12
(10)
g
oz.
kgf · cm
(lbf
⋅
in)
°C/W
UNITS
°C
HFA04SD60S
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94034
Revision: 29-Jul-08
HFA04SD60SPbF
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 4 A
100
1000
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
T
J
= 150 °C
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 125 °C
1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0
1
2
3
4
5
6
0
100
200
300
400
500
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
0.01
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94034
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
HFA04SD60SPbF
Vishay High Power Products
50
I
F
=
8
A
I
F
= 4 A
40
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
200
180
160
140
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
I
F
=
8
A
I
F
= 4 A
Q
rr
(nC)
30
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
20
100
1000
t
rr
(ns)
120
100
80
60
40
20
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
14
12
10
I
F
=
8
A
I
F
= 4 A
1000
I
F
=
8
A
I
F
= 4 A
I
rr
(A)
8
6
4
2
0
100
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
1000
dI
(rec)M
/dt (A/µs)
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
100
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94034
Revision: 29-Jul-08
HFA04SD60SPbF
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 4 A
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94034
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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