HER101GT-G datasheet, PDF - EEWORLD Datasheet

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HER101GT-G: DescriptionHigh Efficiency Rectifiers; CategoryDiscrete semiconductor diode; File Size80KB，4 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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HER101GT-G Overview

High Efficiency Rectifiers

HER101GT-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
Reach Compliance Code	compli
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	50 V
Maximum reverse recovery time	0.05 µs
surface mount	NO

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High Efficiency Rectifiers

HER101G-G Thru. HER108G-G

Voltage: 50 to 1000 V

Current: 1.0 A

RoHS Device

Features

-Glass passivated chip.

-Low forward voltage.

-High reliability.

1.000(25.40) Min.

DO-41

-High surge current capability.

-High speed switching.

0.205(5.21)

0.165(4.19)

Mechanical data

-Case: JEDEC DO-41 molded plastic.

-Epoxy: UL 94V-0 rate flame retardant.

-Polarity: Color band denotes cathode end.

-Lead: Solderable per MIL-STD-202,

method 208 guaranteed.

-Mounting position: Any

-Weight: 0.321 grams

0.117(2.97) DIA.

0.090(2.29) DIA.

1.000(25.40) Min.

0.033(0.84) DIA.

0.028(0.71) DIA.

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HER

101G-G

HER

102G-G

100

HER

103G-G

200

140

200

HER

104G-G

300

210

300

1.0

5.0

-55 ~ +150

1.3

1.7

HER

105G-G

400

280

400

HER

106G-G

600

420

600

HER

107G-G

800

560

800

HER

108G-G

1000

700

1000

Parameter

Maximum repetitive peak reverse voltage

= 5μA

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

=25°C

Maximum instantaneous forward

voltage at specified current

Maximum DC reverse current

Maximum reverse recovery time (Note 1)

Operating temperature range

Storage temperature range

Symbol

RRM

RMS

(AV)

STG

Unit

μA

°C

NOTES:

1. Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A(RGI circuit)

REV:A

QW-BU010

Page 1

Comchip Technology CO., LTD.

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