BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
•
Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
V
CEO
Value
−65
−45
−30
−80
−50
−30
−5.0
−100
Unit
V
2
EMITTER
Collector-Base Voltage
V
CBO
V
1
V
mAdc
2
3
SOT−23
CASE 318
STYLE 6
Emitter−Base Voltage
Collector Current − Continuous
V
EBO
I
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
1
xxM
2
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 8
Publication Order Number:
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= −10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= −10
mA)
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CEO
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current
(V
CB
= −30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mA,
V
CE
= −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
I
CBO
nA
mA
h
FE
−
−
−
125
220
420
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
250
475
800
−
(I
C
= −2.0 mA, V
CE
= −5.0 V)
Collector −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
V
CE(sat)
−
−
V
BE(sat)
−
−
V
BE(on)
−0.6
−
−0.75
−0.82
−
−
−0.3
−0.65
V
V
V
f
T
C
ob
NF
100
−
−
−
−
4.5
MHz
pF
dB
−
−
−
−
10
4.0
http://onsemi.com
2
BC856ALT1 Series
BC857/BC858/BC859
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= −10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
I
C
, COLLECTOR CURRENT (mAdc)
−100 −200
0
−0.1 −0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50
−100
V
BE(on)
@ V
CE
= −10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
−2.0
T
A
= 25°C
−1.6
−1.2
I
C
=
−10 mA
I
C
= −50 mA
I
C
= −20 mA
I
C
= −200 mA
I
C
= −100 mA
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.8
−0.4
0
−0.02
−0.1
−1.0
I
B
, BASE CURRENT (mA)
−10 −20
−0.2
−10
−1.0
I
C
, COLLECTOR CURRENT (mA)
−100
Figure 3. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ob
C
ib
T
A
= 25°C
400
300
200
150
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
V
CE
= −10 V
T
A
= 25°C
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC856ALT1 Series
BC856
−1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= −5.0 V
T
A
= 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE
@ V
CE
= −5.0 V
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−2.0
−1.0
−1.6
I
C
=
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−1.4
−1.2
−1.8
q
VB
for V
BE
−55°C to 125°C
−0.8
−2.2
−0.4
T
J
= 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
I
B
, BASE CURRENT (mA)
−5.0
−10
−20
−2.6
−3.0
−0.2
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mA)
−100 −200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= −5.0 V
200
100
50
20
−100
−1.0
−10
I
C
, COLLECTOR CURRENT (mA)
10
8.0
6.0
4.0
2.0
−0.1 −0.2
C
ob
−0.5
−1.0 −2.0
−5.0 −10 −20
V
R
, REVERSE VOLTAGE (VOLTS)
−50 −100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC856ALT1 Series
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
D = 0.5
0.2
0.05
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 83.3°C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
500
1.0 k
2.0 k
5.0 k 10 k
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
Figure 13. Thermal Response
−200
1s
IC, COLLECTOR CURRENT (mA)
−100
−50
T
A
= 25°C
T
J
= 25°C
3 ms
−10
−5.0
−2.0
−1.0
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
The safe operating area curves indicate I
C
−V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
Figure 14. Active Region Safe Operating Area
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
