LP1024EE datasheet, PDF - EEWORLD Datasheet

LP1024EE: DescriptionVariable Capacitance Diode, Ultra High Frequency, 10pF C(T), 25V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size236KB，2 Pages; ManufacturerMsi Electronics Inc

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LP1024EE Overview

Variable Capacitance Diode, Ultra High Frequency, 10pF C(T), 25V, Silicon, Abrupt

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	X-CXMW-F3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW INDUCTANCE
Minimum breakdown voltage	25 V
Configuration	COMMON ANODE, 2 ELEMENTS
Minimum diode capacitance ratio	4.5
Nominal diode capacitance	10 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JESD-30 code	X-CXMW-F3
Number of components	2
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED
Package form	MICROWAVE
Maximum power dissipation	5 W
Certification status	Not Qualified
minimum quality factor	700
Maximum repetitive peak reverse voltage	25 V
Maximum reverse current	2e-8 µA
Reverse test voltage	20 V
surface mount	YES
Terminal form	FLAT
Terminal location	UNSPECIFIED
Varactor Diode Classification	ABRUPT

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