512K X 72 CACHE SRAM, 6.5 ns, PBGA209
Parameter Name | Attribute value |
maximum clock frequency | 250 MHz |
Number of functions | 1 |
Number of terminals | 209 |
Minimum operating temperature | -40 Cel |
Maximum operating temperature | 85 Cel |
Rated supply voltage | 2.5 V |
Minimum supply/operating voltage | 2.3 V |
Maximum supply/operating voltage | 2.7 V |
Processing package description | 14 X 22 MM, 1 MM PITCH, BGA-209 |
each_compli | Yes |
state | NRFND |
sub_category | SRAMs |
ccess_time_max | 6.5 ns |
i_o_type | COMMON |
jesd_30_code | R-PBGA-B209 |
storage density | 3.77E7 bit |
Memory IC type | CACHE SRAM |
memory width | 72 |
moisture_sensitivity_level | NOT SPECIFIED |
Number of digits | 524288 words |
Number of digits | 512K |
operating mode | SYNCHRONOUS |
organize | 512KX72 |
Output characteristics | 3-STATE |
Packaging Materials | PLASTIC/EPOXY |
ckage_code | LBGA |
ckage_equivalence_code | BGA209,11X19,40 |
packaging shape | RECTANGULAR |
Package Size | GRID ARRAY, LOW PROFILE |
serial parallel | PARALLEL |
eak_reflow_temperature__cel_ | NOT SPECIFIED |
wer_supplies__v_ | 2.5/3.3 |
qualification_status | COMMERCIAL |
seated_height_max | 1.7 mm |
standby_current_max | 0.0800 Amp |
standby_voltage_mi | 2.38 V |
Maximum supply voltage | 0.4000 Amp |
surface mount | YES |
Craftsmanship | CMOS |
Temperature level | INDUSTRIAL |
terminal coating | NOT SPECIFIED |
Terminal form | BALL |
Terminal spacing | 1 mm |
Terminal location | BOTTOM |
ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED |
length | 22 mm |
width | 14 mm |
dditional_feature | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY |