IS62C1024L
IS62C1024L
FEATURES
128K x 8 LOW POWER CMOS STATIC RAM
High-speed access time: 35, 45, 55, 70 ns
Low active power: 450 mW (typical)
Low standby power: 150 µW (typical) CMOS
standby
Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (±10%) power supply
DESCRIPTION
The
1+51
IS62C1024L is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using
1+51
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C1024L is available in 32-pin 600mil DIP, 450mil SOP
and 8*20mm TSOP-1 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 x 2048
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR017-0C
1
IS62C1024L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
0.5 to +7.0
45 to +85
65 to +150
1.5
20
Unit
V
°C
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
V
CC
= Min., I
OH
= 1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
Min.
2.4
2.2
0.3
2
10
2
10
Max.
0.4
V
CC
+ 0.5
0.8
2
10
2
10
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
Com.
Ind.
Com.
Ind.
Notes:
1. V
IL
= 3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
I
SB
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
-35 ns
Min. Max.
100
110
10
15
500
750
-45 ns
Min. Max.
90
100
10
15
500
750
-55 ns
Min. Max.
80
90
10
15
500
750
-70 ns
Min. Max.
70
80
10
15
500
750
Unit
mA
mA
V
CC
= Max.,
Com.
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
, Ind.
or CE2
≤
V
IL
, f = 0
V
CC
= Max.,
Com.
CE1
≤
V
CC
0.2V,
Ind.
CE2
≤
0.2V, V
IN
> V
CC
0.2V,
or V
IN
≤
0.2V, f = 0
I
SB
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
SR017-0C
3
IS62C1024L
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE1
Access Time
CE2 Access Time
OE
Access Time
-35
Min. Max.
35
3
0
0
3
3
0
35
35
35
10
10
10
-45
Min. Max.
45
3
0
0
5
5
0
45
45
45
20
15
15
-55
Min. Max.
55
3
0
0
7
7
0
55
55
55
25
20
20
-70
Min. Max.
70
3
0
0
10
10
0
70
70
70
35
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
ACE
t
DOE
t
LZOE
OE
to Low-Z Output
t
HZOE
OE
to High-Z Output
t
LZCE
CE1
to Low-Z Output
t
LZCE
CE2 to Low-Z Output
t
HZCE
CE1
or CE2 to High-Z Output
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
5 ns
1.5V
See Figures 1a and 1b
AC TEST LOADS
480
Ω
5V
5V
480
Ω
OUTPUT
100 pF
Including
jig and
scope
255
Ω
OUTPUT
5 pF
Including
jig and
scope
255
Ω
Figure 1a.
4
Figure 1b.
Integrated Circuit Solution Inc.
SR017-0C
IS62C1024L
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
DOUT
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
t
OHA
OE
t
DOE
t
HZOE
CE1
t
ACE1/
t
ACE2
t
LZOE
CE2
t
LZCE1/
t
LZCE2
HIGH-Z
t
HZCE
DATA VALID
DOUT
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE1
= V
IL
, CE2 = V
IH
.
3. Address is valid prior to or coincident with
CE1
LOW and CE2 HIGH transitions.
Integrated Circuit Solution Inc.
SR017-0C
5
51mcu
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