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AH152-00

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 0.7pF C(T), 30V, Gallium Arsenide, Abrupt
CategoryDiscrete semiconductor    diode   
File Size111KB,5 Pages
ManufacturerThales Group
Download Datasheet Parametric View All

AH152-00 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 0.7pF C(T), 30V, Gallium Arsenide, Abrupt

AH152-00 Parametric

Parameter NameAttribute value
MakerThales Group
package instructionO-XEMW-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.25
Nominal diode capacitance0.7 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor11000
Maximum reverse current0.1 µA
Reverse test voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationABRUPT
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