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EH71330

Description
Variable Capacitance Diode, KU Band, 33pF C(T), 30V, Silicon, Abrupt, DIE-1
CategoryDiscrete semiconductor    diode   
File Size641KB,56 Pages
ManufacturerTemex Ceramics
Download Datasheet Parametric View All

EH71330 Overview

Variable Capacitance Diode, KU Band, 33pF C(T), 30V, Silicon, Abrupt, DIE-1

EH71330 Parametric

Parameter NameAttribute value
MakerTemex Ceramics
package instructionS-XUUC-N1
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH Q
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5.2
Nominal diode capacitance33 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandKU BAND
JESD-30 codeS-XUUC-N1
Number of components1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor1200
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
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