BC846A / BC846B / BC847A / BC847B / BC847C
BC846A
BC846B
BC847A
BC847B
BC847C
C
C
E
E
SOT-23
Mark: 1A. / 1B.
B
SOT-23
Mark: 1E. / 1F. / 1G.
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1.0
µA
to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
3
Value
Units
V
V
V
V
V
mA
°C
65
45
80
50
6.0
100
-55 to +150
Parameter
BC846 series
BC847 series
BC846 series
BC847 series
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BC846 / BC847
325
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
846A / B
847A / B
846A / B
847A / B
65
45
80
50
6.0
15
5.0
V
V
V
nA
µA
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V
V
CB
= 30 V, T
A
= 150°C
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 5.0 V
846A / 847A
846B / 847B
847C
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
110
200
420
220
450
800
0.25
0.6
0.70
0.77
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.58
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 5.0,
f = 100 MHz
V
CB
= 10 V, f = 1.0 MHz
I
C
= 0.2 mA, V
CE
= 5.0,
R
S
= 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
100
4.5
10
MHz
pF
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
1200
1000
800
600
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
V
CE
= 5.0 V
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
125 °C
- 40 °C
25 °C
0.8
0.6
0.4
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125 °C
β
= 10
0.4
V
CE
= 5.0 V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
CAPACITANCE (pF)
4
3
5
Input and Output Capacitance
vs Reverse Bias Voltage
f = 1.0 MHz
1
C te
3
C ob
2
1
0
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
CHARACTERIS TIC S RELATI VE TO VALUE AT T
A
= 25 C
Normalized Collector-Cutoff Current
vs Ambient Temperature
5
NF - NOISE FIGURE (dB)
Wideband Noise Frequency
vs Source Resistance
V
CE
= 5.0 V
°
1000
4
3
2
1
0
BANDWIDTH = 15.7 kHz
100
I
C
= 100
µA
I
C
= 30
µA
10
I
C
= 10
µA
2,000
5,000
10,000
20,000
50,000
100,000
1
25
50
75
100
125
T
A
- AMBIE NT TEMPERATURE (
°
C)
150
1,000
R
S
- SOURCE RESISTANCE (
Ω
)
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
10
V
CE
- COLLECTOR VOLTAGE (V)
I
C
= 200
µA,
R
S
= 10 kΩ
I
C
= 100
µA,
R
S
= 10 kΩ
I
C
= 1.0 mA,
R
S
= 500
Ω
10
7
5
Contours of Constant Gain
Bandwidth Product (f
T
)
175 MHz
NF - NOISE FIGURE (dB)
8
6
4
3
2
150 MHz
I
C
= 1.0 mA,
R
S
= 5.0 kΩ
V
CE
= 5.0V
2
125 MHz
100 MHz
75 MHz
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
3.0 dB
5,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
10,000
5,000
10,000
4.0 dB
2,000
1,000
500
V
CE
= 5.0 V
2.0 dB
2,000
6.0 dB
8.0 dB
10 dB
f = 100 Hz
BANDWIDTH
= 20 Hz
3.0 dB
1,000
4.0 dB
500
V
CE
= 5.0 V
f = 1.0 kHz
BANDWIDTH
200
= 200 Hz
6.0 dB
8.0 dB
200
100
12 dB
14 dB
100
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
5000
2000
1000
500
200
100
1
V
CE
= 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
R
S
- SOURCE RESISTANCE (
Ω
)
10000
1.0 dB
2.0 dB
3.0 dB
4.0 dB
6.0 dB
8.0 dB
Contours of Constant
Narrow Band Noise Figure
10000
5000
2000
1000
2.0 dB
3.0 dB
5.0
dB
6.0
dB
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1000
V
CE
=
4.0 dB
500
5.0V
f = 1.0 MHz
200
BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I
C
- COLLECTOR CURRENT (
µ
A)
10
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0 kHz)
CHAR ACTERISTI CS R ELATI VE T VALUE(V
CE
=5V)
O
1.4
h
fe
CHARACTE RI STICS RE LATIV E TO VA LUE (T
A
=25
°
C)
Typical Common Emitter Characteristics
1.3
h
ie
Typical Common Emitter Characteristics
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-100
h
oe
h
fe
h
re
h
ie
1.2
1.1
h
re
h
oe
h
re
h
oe
V
CE
= 5.0V
f = 1.0kHz
I
C
= 1.0mA
h
ie
h
re
h
fe
h
oe
1
h
ie
0.9
0.8
I
C
= 1.0mA
f = 1.0kHz
T
A
= 25
°
C
5
10
15
20
V
CE
- COLLECTOR VOLTAGE (V)
25
h
fe
0
-50
0
50
100
T
J
- JUNCTIO N TEMP ERATURE (
°
C)
150
Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I
C
=1mA)
100
f = 1.0kHz
10
h
ie
and h
re
h
re
h
oe
1
h
oe
h
fe
3
0.1
h
ie
h
fe
0.01
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRENT (mA)
50
100
stm32/stm8
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