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CMRDM3575TIN/LEAD

Description
Small Signal Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size498KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMRDM3575TIN/LEAD Overview

Small Signal Field-Effect Transistor,

CMRDM3575TIN/LEAD Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Date Of Intro2018-12-13
CMRDM3575
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM3575
consists of complementary N-Channel and P-Channel
enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer low rDS(ON) and low threshold
voltage.
MARKING CODE: CT
SOT-963 CASE
• Device is
Halogen Free
by design
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, tp < 5.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Power dissipation: 125mW
• Low package profile: 0.5mm (MAX)
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small SOT-963 surface mount package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
N-CH (Q1)
P-CH (Q2)
20
8.0
160
140
200
180
125
-65 to +150
1000
P-CH (Q2)
MIN TYP MAX
-
-
100
-
-
50
-
-
100
20
-
-
0.4
-
1.0
-
4.0
5.0
-
5.5
7.0
-
8.0
10
-
11
17
-
20
-
-
0.14
-
-
4.0
-
-
10
-
-
3.7
-
-
0.50
-
-
0.17
-
-
0.11
-
-
35
-
-
100
-
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
N-CH (Q1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF, IGSSR VGS=5.0V, VDS=0
-
-
100
IDSS
VDS=5.0V, VGS=0
-
-
50
IDSS
VDS=16V, VGS=0
-
-
100
BVDSS
VGS=0, ID=250μA
20
-
-
VGS(th)
VDS=VGS, ID=250μA
0.4
-
1.0
rDS(ON)
VGS=4.5V, ID=100mA
-
1.5
3.0
rDS(ON)
VGS=2.5V, ID=50mA
-
2.0
4.0
-
3.0
6.0
rDS(ON)
VGS=1.8V, ID=20mA
rDS(ON)
VGS=1.5V, ID=10mA
-
4.0
10
rDS(ON)
VGS=1.2V, ID=1.0mA
-
7.0
-
gFS
VDS=5.0V, ID=125mA
-
1.3
-
Crss
VDS=15V, VGS=0, f=1.0MHz
-
2.2
-
Ciss
VDS=15V, VGS=0, f=1.0MHz
-
9.0
-
Coss
VDS=15V, VGS=0, f=1.0MHz
-
3.0
-
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
-
0.458
-
Qgs
VDS=10V, VGS=4.5V, ID=100mA
-
0.176
-
Qgd
VDS=10V, VGS=4.5V, ID=100mA
-
0.138
-
ton
VDD=10V, VGS=4.5V, ID=200mA -
25
-
toff
VDD=10V, VGS=4.5V, ID=200mA -
85
-
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
R3 (12-December 2012)

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