STU7NB90 datasheet, PDF - EEWORLD Datasheet

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STU7NB90: DescriptionN-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET; CategoryDiscrete semiconductor The transistor; File Size277KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STU7NB90 Overview

N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET

STU7NB90 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	MAX220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
Avalanche Energy Efficiency Rating (Eas)	600 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	7.4 A
Maximum drain current (ID)	7.3 A
Maximum drain-source on-resistance	1.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	29.2 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL 900V - 1.1

Ω

- 7.3 A Max220/Max220I

PowerMesh™ MOSFET

TYPE

STU7NB90

STU7NB90I

STU7NB90

STU7NB90I

DSS

900 V

DS(on)

< 1.45

Ω

< 1.45

Ω

7.3 A

TYPICAL R

(on) = 1.1

Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED VOLTAGE SPREAD

Max220

Max220I

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest R

DS(on)

per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(

)

TOT

dv/dt (1)

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuos) at T

= 25°C

Drain Current (continuos) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Value

STU7NB90

900

±30

7.3

4.6

29.2

170

1.36

–65 to 150

150

2500

7.3 (*)

4.6 (*)

29.2 (*)

0.47

STU7NB90I

Unit

W/°C

V/ns

°C

(•)Pulse width limited by safe operating area

(1) I

≤7.3

A, di/dt

≤200A/µs,

≤

(BR)DSS

, T

≤

JMAX.

(*) Current Limited by Package

May 2001

1/9

STU7NB90 Related Products

	STU7NB90	STU7NB90I
Description	N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET	N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
package instruction	MAX220, 3 PIN	MAX220I, 3 PIN
Contacts	3	3
Reach Compliance Code	_compli	_compli
Avalanche Energy Efficiency Rating (Eas)	600 mJ	600 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V	900 V
Maximum drain current (Abs) (ID)	7.4 A	7.3 A
Maximum drain current (ID)	7.3 A	7.3 A
Maximum drain-source on-resistance	1.45 Ω	1.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	160 W	60 W
Maximum pulsed drain current (IDM)	29.2 A	29.2 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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