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SB30100DC-T3-LF

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size44KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

SB30100DC-T3-LF Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

SB30100DC-T3-LF Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
package instructionTO-263, D2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage100 V
Maximum reverse current1000 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
®
SB3020DC – SB30100DC
30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 200A Peak
Low Power Loss, High Efficiency
Fast Switching
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
A
C
J
B
D
PIN 1
2
3
E
G
H
K
P
P
2
Mechanical Data
Case: D
2
PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D PAK/TO-263
Dim
Min
Max
A
B
C
D
9.80
9.60
4.40
8.50
1.00
1.20
0.30
2.35
10.40
10.60
4.80
9.10
2.80
1.40
0.99
1.40
0.70
2.75
PIN 1
PIN 3
Case, PIN 2
E
G
H
J
K
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
SB
3020DC 3030DC 3040DC 3045DC 3050DC 3060DC 3080DC
30100DC
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Total Device
Per Diode
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
Unit
20
14
30
21
40
28
45
32
30
15
200
50
35
60
42
80
56
100
70
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage per diode @I
F
= 15A, T
J
= 25°C
@I
F
= 15A, T
J
= 125°C
Peak Reverse Current
At Rated DC Blocking Voltage
@T
J
= 25°C
@T
J
= 100°C
I
FSM
0.62
0.57
A
0.75
0.65
0.85
0.75
V
FM
I
RM
C
J
R
θJA
R
θJC
T
J
, T
STG
V
mA
1.0
20
750
50
1.5
-55 to +150
500
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1

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