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DR821

Description
5 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size83KB,1 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Download Datasheet Parametric Compare View All

DR821 Overview

5 A, 400 V, SILICON, RECTIFIER DIODE

DR821 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationFAST RECOVERY POWER
Phase1
Maximum reverse recovery time0.3000 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current5 A
Maximum non-repetitive peak forward current300 A

DR821 Related Products

DR821 DR822 DR824 DR826
Description 5 A, 400 V, SILICON, RECTIFIER DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE
Number of terminals 2 2 2 2
Number of components 1 1 1 1
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape round round round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire
terminal coating tin lead tin lead tin lead tin lead
Terminal location AXIAL AXIAL AXIAL AXIAL
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single single
Shell connection isolation isolation isolation isolation
Diode component materials silicon silicon silicon silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode
application FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER FAST RECOVERY POWER
Phase 1 1 1 1
Maximum reverse recovery time 0.3000 us 0.3000 us 0.3000 us 0.3000 us
Maximum repetitive peak reverse voltage 400 V 400 V 400 V 400 V
Maximum average forward current 5 A 5 A 5 A 5 A
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A
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