SILICON, ZERO BARRIER SCHOTTKY,K BAND, MIXER DIODE
Parameter Name | Attribute value |
Maker | TE Connectivity |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | MIXER DIODE |
frequency band | K BAND |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Pulse input maximum power | 0.1 W |
Minimum pulse input power | 0.5 W |
Certification status | Not Qualified |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | WIRE |
Terminal location | AXIAL |
Schottky barrier type | ZERO BARRIER |