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JTX1N6145A

Description
Trans Voltage Suppressor Diode, 1500W, 9.9V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size118KB,2 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
Download Datasheet Parametric View All

JTX1N6145A Overview

Trans Voltage Suppressor Diode, 1500W, 9.9V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

JTX1N6145A Parametric

Parameter NameAttribute value
MakerSEMTECH
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage12.35 V
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components2
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
GuidelineMIL-19500/516
Maximum repetitive peak reverse voltage9.9 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
QPL
1500 Watt Axial Leaded TVS
1N6138A
1N6173A
Thru
TEL:805-498-2111 FAX:805-498-3804
DESCRIPTION
The 1N61xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using two p-n junction TVS diodes in a back-to-
back configuration, hermetically sealed in a voidless glass
package. The hermetically sealed package provides high
reliability in harsh environmental conditions. TVS diodes
are further characterized by their high surge capability, low
operating and clamping voltages, and a theoretically
instantaneous response time. This makes them ideal for
use as board level protection for sensitive semiconductor
components.
FEATURES:
1500 Watts Peak Pulse Power (tp = 10/1000µs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Military & Industrial applications
Available in
JAN, JTX, JTXV
and
JANS
versions
per MIL-S-19500/516
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo
MAXIMUM RATINGS
RATING
Peak Pulse Power (tp = 10 x 1000µs)
Operating Temperature
Storage Temperature
Steady-State Power Dissipation @ TL = 75ºC (3/8”)
SYMBOL
Ppk
Tj
Tstg
PD
VALUE
1500
-65 to +175
-65 to +175
5
UNIT
Watts
°C
°C
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
V
RWM
1N6138A
1N6139A
1N6140A
1N6141A
1N6142A
1N6143A
1N6144A
1N6145A
1N6146A
1N6147A
1N6148A
1N6149A
1N6150A
1N6151A
1N6152A
1N6153A
1N6154A
1N6155A
1N6156A
1N6157A
1N6158A
1N6159A
1N6160A
1N6161A
1N6162A
1N6163A
1N6164A
1N6165A
1N6166A
1N6167A
1N6168A
1N6169A
1N6170A
1N6171A
1N6172A
1N6173A
(V)
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
REVERSE
LEAKAGE
CURRENT
I
R
(µA)
500
300
100
100
100
20
20
20
20
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ I
T
(V)
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
TEST
CURRENT
I
T
(mA)
175
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
MAXIMUM
CLAMPING
VOLTAGE
VC @ I
PP
(V)
10.5
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
PEAK PULSE
CURRENT
Ipp
tp = 1mS
(A)
142.8
133.9
124.0
111.9
103.4
96.2
88.8
82.4
71.4
67.3
59.8
54.2
49.2
45.0
40.1
36.0
32.8
30.1
28.0
25.4
23.2
21.4
19.5
17.6
15.4
14.5
13.3
12.0
10.9
9.9
9.1
8.4
7.3
6.9
6.1
5.5
TEMPERATURE
COEFFICIENT
OF V
BR
αVz
% / °C
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.085
0.085
0.085
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.105
0.105
0.105
0.110
0.110
MAXIMUM
REVERSE
LEAKAGE
CURRENT (Ir2)
TA=+150°C
(A)
12000
3000
2000
1200
800
800
600
600
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
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