K8S6615ETD-FC7E0 datasheet, PDF

K8S6615ETD-FC7E0: DescriptionFlash, 4MX16, 70ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44; Categorystorage storage; File Size1MB，48 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K8S6615ETD-FC7E0 Overview

Flash, 4MX16, 70ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	44
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
Other features	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	TOP
JESD-30 code	R-PBGA-B44
memory density	67108864 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	44
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM

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