4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Renesas Electronics Corporation |
Parts packaging code | BGA |
package instruction | LBGA, BGA165,11X15,40 |
Contacts | 165 |
Reach Compliance Code | unknow |
ECCN code | 3A991.B.2.A |
Maximum access time | 0.45 ns |
Maximum clock frequency (fCLK) | 300 MHz |
I/O type | SEPARATE |
JESD-30 code | R-PBGA-B165 |
length | 17 mm |
memory density | 37748736 bi |
Memory IC Type | QDR SRAM |
memory width | 9 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 4MX9 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Encapsulate equivalent code | BGA165,11X15,40 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
power supply | 1.5/1.8,1.8 V |
Certification status | Not Qualified |
Maximum seat height | 1.46 mm |
Maximum standby current | 0.43 A |
Minimum standby current | 1.7 V |
Maximum slew rate | 0.7 mA |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
width | 15 mm |