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UPD44325092BF5-E33Y-FQ1

Description
4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
Categorystorage    storage   
File Size387KB,36 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPD44325092BF5-E33Y-FQ1 Overview

4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165

UPD44325092BF5-E33Y-FQ1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Maximum clock frequency (fCLK)300 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bi
Memory IC TypeQDR SRAM
memory width9
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX9
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.46 mm
Maximum standby current0.43 A
Minimum standby current1.7 V
Maximum slew rate0.7 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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