TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
DECEMBER 1998 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
V
DRM
V
58
66
100
120
145
180
200
220
240
270
V
(BO)
V
72
82
125
150
180
240
260
290
320
380
LM PACKAGE
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
MD4XAT
NC - No internal connection on pin 2
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
MD4XAKB
NC - No internal connection on pin 2
q
Rated for International Surge Wave Shapes
WAVE SHAPE
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
FCC Part 68
I3124
ITU-T K20/21
FCC Part 68
REA PE-60
I
TSP
A
60
38
50
45
35
R
PACKAGE TYPE
Straight Lead DO-92 Bulk Pack
Straight Lead DO-92 Tape and Reeled
SD4XAA
device symbol
T
q
Ordering Information
DEVICE TYPE
TISP4xxxF3LM
TISP4xxxF3LMR
Terminals T and R correspond to the
alternative line designators of A and B
TISP4xxxF3LMFR Formed Lead DO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
description (continued)
TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The TISP4xxxF3LMF
is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings
RATING
‘4072
‘4082
‘4125
‘4150
Repetitive peak off-state voltage (0 °C < T
J
< 70 °C)
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz,
1s
Linear current ramp, Maximum ramp value < 38 A
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < T
J
< 70 °C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
I
TSM
di
T
/dt
T
J
T
stg
I
TSP
175
120
60
50
38
38
50
45
35
80
70
4
250
-40 to +150
-55 to +150
A
A/µs
°C
°C
A
V
DRM
SYMBOL
VALUE
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
V
UNIT
PRODUCT
2
INFORMATION
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, T
J
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0 °C < T
J
< 70 °C
‘4072
‘4082
‘4125
‘4150
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
V
(BO)
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
SOURCE
= 50
Ω,
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
±10
V
d
= 1 Vrms, V
D
= 0,
‘4072 - ‘4082
‘4125 - ‘4180
C
off
Off-state capacitance
‘4240 - ‘4380
f = 100 kHz,
V
d
= 1 Vrms, V
D
= -50 V
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
MAX
±10
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
A
V
A
kV/µs
µA
V
V
UNIT
µA
thermal characteristics
PARAMETER
R
θJA
Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
MIN
TYP
MAX
120
UNIT
°C/W
PRODUCT
INFORMATION
3
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
V
(BO)
I
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR R AND T TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE T TERMINAL
PRODUCT
4
INFORMATION
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC4XAA
V
DRM
DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
1.00
100
TC4XAB
10
I
D
- Off-State Current - µA
0.99
Derating Factor
1
0.98
'4072
AND
'4082
'4125
THRU
'4180
V
D
= 50 V
V
D
= -50 V
0·1
0.97
0·01
0.96
'4240
THRU
'4380
-35
-30
-25
-20
-15
-10
-5
T
AMIN
- Minimum Ambient Temperature - °C
0
0·001
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
0.95
-40
Figure 2.
NORMALISED V
(BO)
ON-STATE CURRENT
vs
vs
ON-STATE VOLTAGE
AMBIENT TEMPERATURE
100
Figure 3.
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
2.0
TC4XAD
TC3MAL
TC4XAC
V
(BO)
NormalisedCurrent - A
I - On-State to 25°C Value
Normalised Holding Current
1.1
'4125
THRU
'4180
'4072
AND
'4082
1.5
1.0
0.9
0.8
0.7
0.6
0.5
10 '4240
THRU
1.0
'4380
'4240
THRU
'4380
T
25°C
'4072
150°C
AND
'4082
1 -25
-40°C
0.91
0.4
2
3
4
5
7
0
25
50
75
100 6 125 8 9 10
150
T
A
-V
T
- On-State Voltage - -V
Ambient Temperature °C
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
京公网安备 11010802033920号
EEWORLD
