DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Integrated Silicon Solution ( ISSI ) |
| Parts packaging code | BGA |
| package instruction | LBGA, BGA165,11X15,40 |
| Contacts | 165 |
| Reach Compliance Code | compli |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 0.45 ns |
| Other features | PIPELINED ARCHITECTURE |
| Maximum clock frequency (fCLK) | 400 MHz |
| I/O type | COMMON |
| JESD-30 code | R-PBGA-B165 |
| JESD-609 code | e0 |
| length | 17 mm |
| memory density | 18874368 bi |
| Memory IC Type | DDR SRAM |
| memory width | 18 |
| Humidity sensitivity level | 3 |
| Number of functions | 1 |
| Number of terminals | 165 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX18 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | LBGA |
| Encapsulate equivalent code | BGA165,11X15,40 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 1.8 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.4 mm |
| Maximum standby current | 0.32 A |
| Maximum slew rate | 0.75 mA |
| Maximum supply voltage (Vsup) | 1.89 V |
| Minimum supply voltage (Vsup) | 1.71 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | TIN LEAD |
| Terminal form | BALL |
| Terminal pitch | 1 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 15 mm |
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