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2SB1215

Description
Bipolar Transistors;PNP;-3A;-100V;TO-251
CategoryDiscrete semiconductor   
File Size254KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

2SB1215 Overview

Bipolar Transistors;PNP;-3A;-100V;TO-251

isc
Silicon PNP Power Transistor
2SB1215
DESCRIPTION
·Excellent
linearity of h
FE
·Small
and slim package making it easy to make 2SB1215/2SD1815-used set smaller
·Low
collector-to-emitter saturation voltage
·Fast
switching speed
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay
drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ Ta=25℃
Junction Temperature
Storage Temperature Range
VALUE
-120
-100
-6
-3
-6
20
1.0
150
-55~150
UNIT
V
V
V
A
A
W
W
P
C
T
J
T
stg
isc website
www.iscsemi.com
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isc & iscsemi
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