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GS820E32GQ-4T

Description
Cache SRAM, 64KX32, 11ns, CMOS, PQFP100, QFP-100
Categorystorage    storage   
File Size345KB,23 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS820E32GQ-4T Overview

Cache SRAM, 64KX32, 11ns, CMOS, PQFP100, QFP-100

GS820E32GQ-4T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeQFP
package instructionQFP,
Contacts100
Reach Compliance Codecompli
ECCN code3A991.B.2.B
Maximum access time11 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density2097152 bi
Memory IC TypeCACHE SRAM
memory width32
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height3.35 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm

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