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GC1509B-2%

Description
Variable Capacitance Diode, 4.7pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size69KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

GC1509B-2% Overview

Variable Capacitance Diode, 4.7pF C(T), 30V, Silicon, Abrupt

GC1509B-2% Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-CEMW-N2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio3.9
Nominal diode capacitance4.7 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2500
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
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