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SK13B

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size207KB,2 Pages
ManufacturerSilicon Standard Corp
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SK13B Overview

Rectifier Diode,

SK13B Parametric

Parameter NameAttribute value
MakerSilicon Standard Corp
Reach Compliance Codeunknow
ECCN codeEAR99
SK12B-SK110B
1A Surface Mount Schottky Barrier Rectifiers
Voltage range 20-100 Volts
FEATURES
For surface-mount applications
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260°C / 10 seconds at terminals
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
MECHANICAL DATA
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.093 gram
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Pb-free, RoHS compliant.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
=75°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current (Note 1)@ T
A
=25°C
at Rated DC Blocking Voltage
@ T
A
=100°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
SK
12B
20
14
20
SK
13B
30
21
30
SK
14B
40
28
40
SK
15B
50
35
50
1.0
30
SK
16B
60
42
60
SK
Units
110B
100
70
100
V
V
V
A
A
0.5
0.5
10.0
0.75
5.0
25
110
0.85
1.0
V
mA
mA
°C/W
pF
°C
°C
Typical Thermal Resistance ( Note 1 )
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
θ
JL
Cj
T
J
T
STG
-55 to +125
-55 to +150
-55 to +150
Notes
:
1. Thermal
resistance
from
junction
to
lead.
2. Measured at 1.0 MHz and
applied reverse voltage
of 4.0V.
3. Measured on P.C.board with 0.4 x 0.4” (10 x 10mm)
copper pad areas.
8/26/2004 Rev.1.01
www.SiliconStandard.com
1 of 2

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