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6116SA120L24B

Description
Standard SRAM, 2KX8, 120ns, CMOS, CQCC24
Categorystorage    storage   
File Size788KB,12 Pages
ManufacturerIDT (Integrated Device Technology)
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6116SA120L24B Overview

Standard SRAM, 2KX8, 120ns, CMOS, CQCC24

6116SA120L24B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Code_compli
Maximum access time120 ns
I/O typeCOMMON
JESD-30 codeR-XQCC-N24
JESD-609 codee0
memory density16384 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeQCCN
Encapsulate equivalent codeLCC24,.3X.4
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.01 A
Minimum standby current4.5 V
Maximum slew rate0.1 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30

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