ZVN1409ASM datasheet, PDF - EEWORLD Datasheet

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ZVN1409ASM: DescriptionSmall Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size63KB，1 Pages; ManufacturerDiodes Incorporated

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ZVN1409ASM Overview

Small Signal Field-Effect Transistor, 0.01A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN1409ASM Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	SMALL OUTLINE, R-PSSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.01 A
Maximum drain-source on-resistance	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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